10N60.pdf

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Preliminary data
Low V
CE(sat)
IGBT
High speed IGBT
V
CES
IXGA/IXGP/IXGH10N60
600 V
IXGA/IXGP/IXGH10N60A
600 V
I
C25
20 A
20 A
V
CE(sat)
2.5 V
3.0 V
TO-220AB(IXGP)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 150
Ω
Clamped inductive load, L = 300
µH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
20
10
40
I
CM
= 20
@ 0.8 V
CES
100
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
Features
l
International standard packages
JEDEC TO-263 AA surface
mountable and JEDEC TO-247 AD
l
2nd generation HDMOS
TM
process
Low V
CE(sat)
- for low on-state conduction losses
l
High current handling capability
l
MOS Gate turn-on
- drive simplicity
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
Space savings, TO-263 AA
l
Facilitates automated assembly
l
Reduces assembly time and cost
l
Easy to mount with 1 screw, TO-247
(isolated mounting screw hole)
l
High power density
l
G C
E
TO-263 AA (IXGA)
G
E
C (TAB)
TO-247 AD (IXGH)
G
C (TAB)
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque, TO-247 AD
TO-263 AA
TO-247 AD
1.13/10 Nm/lb.in.
2
6
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25°C
T
J
= 125°C
5
200
1
±100
10N60
10N60A
2.5
3.0
V
V
µA
mA
nA
V
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
µA,
V
GE
= 0 V
= 250
µA,
V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
© 1996 IXYS All rights reserved
91510G (9/96 )
IXGA/ IXGP/
IXGA/ IXGP/
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
4
8
S
IXGH10N60
IXGH10N60A
TO-220 AB Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2 %
750
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
100
30
50
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25°C
°
I
C
= I
C90
, V
GE
= 15 V, L = 100
µH
V
CE
= 0.8 V
CES
,
R
G
= R
off
= 150
Ω
Remarks: Switching times
may increase for V
CE
10N60A
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
10N60A
Inductive load, T
J
= 125°C
°
I
C
= I
C90
, V
GE
= 15 V,
L = 100
µH
V
CE
= 0.8 V
CES
,
R
G
= R
off
= 150
Ω
15
25
100
200
0.4
600
300
0.6
100
200
1
900
570
360
2.0
1.2
1500
2000
600
70
25
45
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
ns
mJ
mJ
1.25 K/W
1.
2.
3.
4.
Gate
Collector
Emitter
Collector Bottom Side
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Millimeter
Min.
Max.
12.70
14.93
14.23
16.50
9.66
3.54
5.85
2.29
1.15
2.79
0.64
2.54
4.32
0.64
0.51
2.04
10.66
4.08
6.85
2.79
1.77
6.35
0.89
BSC
4.82
1.39
0.76
2.49
Inches
Min.
Max.
0.500
0.580
0.560
0.650
0.380
0.139
0.230
0.090
0.045
0.110
0.025
0.100
0.170
0.025
0.020
0.080
0.420
0.161
0.270
0.110
0.070
0.250
0.035
BSC
0.190
0.055
0.030
0.115
TO-263 AA Outline
10N60
Remarks: Switching times
10N60A
may increase for V
CE
(Clamp) > 0.8 • V
CES
, higher 10N60
10N60A
T
J
or increased R
G
0.25
K/W
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
IXGA/P/IXGH 10N60 / 10N60A characteristic curves are located in the
IXGH 10N60U1 and IXGH 10N60AU1 data sheet.
TO-247 AD Outline
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
∅P
Q
R
S
Millimeter
Min.
Max.
4.7
5.3
2.2
2.54
2.2
2.6
1.0
1.4
1.65
2.13
2.87
3.12
.4
.8
20.80
21.46
15.75
16.26
5.20
5.72
19.81
20.32
4.50
3.55
3.65
5.89
6.40
4.32
5.49
6.15
BSC
Inches
Min.
Max.
.185
.209
.087
.102
.059
.098
.040
.055
.065
.084
.113
.123
.016
.031
.819
.845
.610
.640
0.205 0.225
.780
.800
.177
.140
.144
0.232 0.252
.170
.216
242
BSC
Millimeter
Min.
Max.
4.06
4.83
2.03
2.79
0.51
0.99
1.14
1.40
0.46
0.74
1.14
1.40
8.64
9.65
7.11
8.13
9.65
10.29
6.86
8.13
2.54
BSC
14.61
15.88
2.29
2.79
1.02
1.40
1.27
1.78
0
0.38
0.46
0.74
Inches
Min. Max.
.160
.190
.080
.110
.020
.039
.045
.055
.018
.029
.045
.055
.340
.380
.280
.320
.380
.405
.270
.320
.100 BSC
.575
.625
.090
.110
.040
.055
.050
.070
0
.015
.018
.029
∅
P
Min. Recommended Footprint
e
(Dimensions in inches and (mm))
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025

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