LMX2301.pdf

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LMX2301 PLLatinum 160 MHz Frequency Synthesizer
for RF Personal Communications
PRELIMINARY
November 1996
LMX2301
PLLatinum
TM
160 MHz Frequency Synthesizer
for RF Personal Communications
General Description
The LMX2301 is a high performance frequency synthesizer
designed for RF operation up to 160 MHz It is fabricated
using National’s ABiC IV BiCMOS process
LMX2301 which employs the digital phase lock loop tech-
nique combined with a high quality reference oscillator and
a loop filter provides the tuning voltage for the voltage con-
trolled oscillator to generate a very stable low noise local
oscillator signal
Serial data is transferred into the LMX2301 via a three line
MICROWIRE
TM
interface (Data Enable Clock) Supply volt-
age can range from 2 7V to 5 5V
The LMX2301 features very low current consumption typi-
cally 2 mA at 3V
The LMX2301 is available in a TSSOP 20-pin surface mount
plastic package
Features
Y
Y
Y
Y
Y
RF operation up to 160 MHz
2 7V to 5 5V operation
Low current consumption
I
CC
e
2 mA (typ) at V
CC
e
3V
Internal balanced low leakage charge pump
Small-outline plastic surface mount TSSOP
0 173 wide package
Applications
Y
Y
Y
Analog Cellular telephone systems
(AMPS ETACS NMT)
Portable wireless communications
(PCS PCN cordless)
Other wireless communication systems
Block Diagram
TL W 12458 – 1
TRI-STATE is a registered trademark of National Semiconductor Corporation
MICROWIRE
TM
and PLLatinum
TM
are trademarks of National Semiconductor Corporation
C
1996 National Semiconductor Corporation
TL W 12458
RRD-B30M126 Printed in U S A
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Connection Diagram
LMX2301
TL W 12458 –2
20-Lead (0 173 Wide) Thin Shrink
Small Outline Package (TM)
Order Number LMX2301TM or LMX2301TMX
See NS Package Number MTC20
Pin Descriptions
Pin No
1
Pin Name
OSC
IN
I O
I
Description
Oscillator input A CMOS inverting gate input intended for connection to a crystal resonator for
operation as an oscillator The input has a V
CC
2 input threshold and can be driven from an
external CMOS or TTL logic gate May also be from a reference oscillator
Oscillator output
Power supply for charge pump Must be
t
V
CC
Power supply voltage input Input may range from 2 7V to 5 5V Bypass capacitors should be
placed as close as possible to this pin and be connected directly to the ground plane
O
Internal charge pump output For connection to a loop filter for driving the input of an external
VCO
Ground
O
I
I
I
I
Lock detect Output provided to indicate when the VCO frequency is in ‘‘lock’’ When the loop is
locked the pin’s output is HIGH with narrow low pulses
RF buffer input Small signal input from the VCO
High impedance CMOS Clock input Data is clocked in on the rising edge into the various
counters and registers
Binary serial data input Data entered MSB first LSB is control bit High impedance CMOS input
Load enable input (with internal pull-up resistor) When LE transitions HIGH data stored in the
shift registers is loaded into the appropriate latch (control bit dependent) Clock must be low
when LE toggles high or low See Serial Data Input Timing Diagram
Phase control select (with internal pull-up resistor) When FC is LOW the polarity of the phase
comparator and charge pump combination is reversed
Analog switch output When LE is HIGH the analog switch is ON routing the internal charge
pump output through BISW (as well as through D
o
)
Monitor pin of phase comparator input CMOS output
Output for external charge pump
w
p
is an open drain N-channel transistor and requires a pull-up
resistor
Power Down (with internal pull-up resistor)
PWDN
e
HIGH for normal operation
PWDN
e
LOW for power saving
Power down function is gated by the return of the charge pump to a TRI-STATE condition
Output for external charge pump
w
r
is a CMOS logic output
No connect
3
4
5
6
7
8
10
11
13
14
OSC
OUT
V
P
V
CC
D
o
GND
LD
f
IN
CLOCK
DATA
LE
O
15
16
17
18
19
FC
BISW
f
OUT
w
p
PWDN
I
O
O
O
I
20
2 9 12
w
r
NC
O
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2
Functional Block Diagram
TL W 12458 – 3
Note 1
The power down function is gated by the charge pump to prevent any unwanted frequency jumps Once the power down pin is brought low the part will go
into power down mode when the charge pump reaches a TRI-STATE condition
3
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Absolute Maximum Ratings
(Notes 1 and 2)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Power Supply Voltage
V
CC
V
P
Voltage on Any Pin
with GND
e
0V (V
I
)
Storage Temperature Range (T
S
)
Lead Temperature (T
L
) (solder 4 sec )
b
0 3V to
a
6 5V
b
0 3V to
a
6 5V
b
0 3V to V
CC
a
0 3V
b
65 C to
a
150 C
a
260 C
Recommended Operating
Conditions
Power Supply Voltage
V
CC
V
P
Operating Temperature (T
A
)
2 7V to 5 5V
V
CC
to
a
5 5V
b
40 C to
a
85 C
Note 1
Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur Operating Ratings indicate conditions for which the
device is intended to be functional but do not guarantee specific perform-
ance limits For guaranteed specifications and test conditions see the Elec-
trical Characteristics The guaranteed specifications apply only for the test
conditions listed
Note 2
This device is a high performance RF integrated circuit with an ESD
rating
k
2 keV and is ESD sensitive Handling and assembly of this device
should only be done at ESD workstations
Electrical Characteristics
V
CC
e
5V
Symbol
I
CC
I
CC-PWDN
f
IN
f
OSC
f
w
Pf
IN
V
OSC
V
IH
V
IL
I
IH
I
IL
I
IH
I
IL
I
IH
I
IL
High-Level Input Current (LE FC)
Low-Level Input Current (LE FC)
Parameter
Power Supply Current
Power Down Current
RF Input Operating Frequency
Oscillator Input Operating Frequency
Phase Detector Frequency
Input Sensitivity
Oscillator Sensitivity
High-Level Input Voltage
Low-Level Input Voltage
High-Level Input Current (Clock Data)
Low-Level Input Current (Clock Data)
Oscillator Input Current
V
P
e
5V
b
40 C
k
T
A
k
85 C except as specified
Conditions
V
CC
e
3 0V
V
CC
e
5 0V
V
CC
e
3 0V
V
CC
e
5 0V
45
5
V
CC
e
2 7V to 5 5V
OSC
IN
b
10
Min
Typ
20
30
30
60
Max
5
180
350
160
20
10
a
6
Units
mA
mA
mA
mA
MHz
MHz
MHz
dBm
V
PP
V
05
0 7 V
CC
0 3 V
CC
V
mA
mA
mA
mA
V
IH
e
V
CC
e
5 5V
V
IL
e
0V V
CC
e
5 5V
V
IH
e
V
CC
e
5 5V
V
IL
e
0V V
CC
e
5 5V
V
IH
e
V
CC
e
5 5V
V
IL
e
0V V
CC
e
5 5V
b
1 0
b
1 0
10
10
100
b
100
b
1 0
b
100
10
10
mA
mA
Except f
IN
and OSC
IN
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4
Electrical Characteristics
V
CC
e
5 0V
Symbol
I
Do-source
I
Do-sink
I
Do-Tri
V
OH
V
OL
V
OH
V
OL
I
OL
I
OH
R
ON
t
CS
t
CH
t
CWH
t
CWL
t
ES
t
EW
Charge Pump TRI-STATE Current
High-Level Output Voltage
Low-Level Output Voltage
High-Level Output Voltage (OSC
OUT
)
Low-Level Output Voltage (OSC
OUT
)
Open Drain Output Current (w
p
)
Open Drain Output Current (w
p
)
Analog Switch ON Resistance
Data to Clock Set Up Time
Data to Clock Hold Time
Clock Pulse Width High
Clock Pulse Width Low
Clock to Enable Set Up Time
Enable Pulse Width
Parameter
Charge Pump Output Current
V
P
e
5 0V
b
40 C
k
T
A
k
85 C except as specified (Continued)
Conditions
V
Do
e
V
P
2
V
Do
e
V
P
2
0 5V
s
V
Do
s
V
P
b
0 5V
T
A
e
25 C
I
OH
e b
1 0 mA
I
OL
e
1 0 mA
I
OH
e b
200
mA
I
OL
e
200
mA
V
CC
e
5 0V V
OL
e
0 4V
V
OH
e
5 5V
100
See Data Input Timing
See Data Input Timing
See Data Input Timing
See Data Input Timing
See Data Input Timing
See Data Input Timing
50
10
50
50
50
50
10
100
V
CC
b
0 8
04
b
5 0
Min
Typ
b
5 0
Max
Units
mA
mA
50
50
nA
V
V
CC
b
0 8
04
V
V
V
mA
mA
X
ns
ns
ns
ns
ns
ns
Except OSC
OUT
5
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